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  Our SOI wafers are manufactured from prime ingot or prime slices only. We have the capability to slice, edge grind, LAP, etch, single and double side polished  wafers to maximize our capability and flexibility.  
  SOI Specification  
  3”, 100mm, 125mm, 150mm, and 200mm  
  Device Thickness and Max Tolerance  
  3”, 100 mm, 125 mm, and 150 mm: 2-50 +/- .5μm  
  50-150 +/- 1μm  
  >150 +/- 2μm  
  200 mm 6-50 +/- .5μm  
  50-150 +/- 1μm  
  >150 +/- 2μm  
  Oxide Layer Thickness  
  Standard - .5μm, 1μm, and 2μm  
  Optional - .1 – 10μm  
  Handle Wafer Thickness  
  3”, 100mm – 300μm and up  
  125 mm, 150mm – 400μm and up  
  200mm – 500μm and up  
  Tolerance: Standard +/- 25μm  
  Special +/- 5μm  
  N type – Phosphorous, Arsenic, and Antimony  
  P Type – Boron  
  Most resistivities available on request including high resistivity Float Zone and low resistivity CZ  
  <1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request  
  Standard tolerance +/- .5 degree  
  Special tolerance as low as +/- .1 degree  
  Flat Orientation  

All major flats/Notches are on the <110> Plane +/-.5 degree


Tighter specificatioin available upon request


Semi std minor flats are standard on 76.2 and 100mm

  Double side polished standard  
  Optional backside finishes – nano grind or oxide  
  Oxide and nitride can be supplied on both sides of the wafer.  
  Optional Ion Implanted Buried Layer  
  A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available. This service is provided by an outside contractor.  
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