Our SOI wafers are manufactured from prime ingot or prime slices only. We have the capability to slice, edge grind, LAP, etch, single and double side polished wafers to maximize our capability and flexibility.
SOI Specification
Diameter 76.2mm, 100mm, 125mm, 150mm, and 200mm
Device Thickness Capability:
3" + 4": From 1.5um up to 600um depends on customer's request.
5" + 6" + 8": From 2um up to 600um depends on customer's request.
Device Thickness Tolerance:
3" + 4":
- 1.5um thickness = +/-0.7um tolerance
- >2um thickness = +/-0.5um tolerance
- 10-149.99um = +/-1um or +/-0.5um tolerance
- 150-199.99um = +/-2um tolerance
- 200um-299.99um = +/-3um tolerance
- 300-600um = +/-10um tolerance
5" + 6":
- <10um (minimum >2um) thickness = +/-0.7um tolerance
- 10-149.99um thickness = +/-1um or +/-0.7um tolerance
- 150-199.99um = +/-2.5um tolerance
- 200-299.99um = +/-5um tolerance
- 300-600um = +/-10um tolerance
8"
- <10um (minimum >2um) thickness = +/-1.5um tolerance
- 10-149.99um = +/-1.5um or +/-1um tolerance
- 150-199.99um = +/-3um tolerance
- 200-299.00um = +/-5um tolerance
- 300-600um = +/-10um tolerance
Handle Wafer Thickness:
- 3" + 4": From 200um up to >530um
- 4" + 6": From 300um up to >625um
- 8": From 485um up to 725um
Handle Thickness Tolerance:
- 3" + 4": +/-15um
- 4" + 6": +/-20um
- 8": +/-25um
Dopants:
- N type: Phosphorous, Arsenic, and Antimony
- P type: Boron
- Intrinsic/Undoped
Resistivities:
- Most resistivities available on request, including high resistivity Float Zone and low resistivity CZ
Orientation:
- <1-0-0> Standard
- <1-1-1> and <1-1-0> Optional on request
Standard tolerance: ±0.5 degree
Special tolerance: as low as ±0.1 degree
Flat Orientation:
- All major flats/notches are on the <110> plane: ±0.5 degree
- Tighter specifications available upon request
- Semi-standard minor flats are standard on 76.2mm and 100mm
Finish:
- Double side polished standard
- Optional backside finishes: nano grind polished or polish with oxide
Coatings:
- Oxide and nitride can be supplied on both sides of the wafer.
Optional Ion Implanted Buried Layer:
- A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available. This service is provided by an outside contractor.
Please email: sales@ultrasil.com or call: (510) 266-3700 for a quote.
