Our SOI wafers are manufactured from prime ingot or prime slices only. We have the capability to slice, edge grind, LAP, etch, single and double side polished wafers to maximize our capability and flexibility.
Diameter 3”, 100mm, 125mm, 150mm, and 200mm Device Thickness and Max Tolerance 3”, 100 mm, 125 mm, and 150 mm: 2-50 +/- .5μm 50-150 +/- 1μm >150 +/- 2μm 200 mm 6-50 +/- .5μm 50-150 +/- 1μm >150 +/- 2μm
Oxide Layer Thickness
Standard - .5μm, 1μm, and 2μm
Optional - .1 – 10μm
Handle Wafer Thickness
3”, 100mm – 300μm and up
125 mm, 150mm – 400μm and up
200mm – 500μm and up
Tolerance: Standard +/- 25μm
Special +/- 5μm
N type – Phosphorous, Arsenic, and Antimony
P Type – Boron
Most resistivities available on request including high resistivity Float Zone and low resistivity CZ
<1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request
Standard tolerance +/- .5 degree
Special tolerance as low as +/- .1 degree
All major flats/Notches are on the <110> Plane +/-.5 degree
Tighter specificatioin available upon request
Semi std minor flats are standard on 76.2 and 100mm
Double side polished standard
Optional backside finishes – nano grind or oxide
Oxide and nitride can be supplied on both sides of the wafer.
Optional Ion Implanted Buried Layer
A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available. This service is provided by an outside contractor.
Please e-mail or call for quote.