Silicon on Insulator (SOI) Wafers

 Our SOI wafers are manufactured from prime ingot or prime slices only. We have the capability to slice, edge grind, LAP, etch, single and double side polished wafers to maximize our capability and flexibility.

SOI Specification

Diameter 3”, 100mm, 125mm, 150mm, and 200mm Device Thickness and Max Tolerance 3”, 100 mm, 125 mm, and 150 mm: 2-50 +/- .5μm 50-150 +/- 1μm >150 +/- 2μm 200 mm 6-50 +/- .5μm 50-150 +/- 1μm >150 +/- 2μm

Oxide Layer Thickness

Standard - .5μm, 1μm, and 2μm

Optional - .1 – 10μm

Handle Wafer Thickness

3”, 100mm – 300μm and up

125 mm, 150mm – 400μm and up

200mm – 500μm and up

Tolerance: Standard +/- 25μm

Special +/- 5μm


N type – Phosphorous, Arsenic, and Antimony

P Type – Boron


Most resistivities available on request including high resistivity Float Zone and low resistivity CZ


<1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request

Standard tolerance +/- .5 degree

Special tolerance as low as +/- .1 degree

Flat Orientation

All major flats/Notches are on the <110> Plane +/-.5 degree

Tighter specificatioin available upon request

Semi std minor flats are standard on 76.2 and 100mm


Double side polished standard

Optional backside finishes – nano grind or oxide


Oxide and nitride can be supplied on both sides of the wafer.

Optional Ion Implanted Buried Layer

A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available. This service is provided by an outside contractor.
Please e-mail or call for quote.